Semiconductor device supplying charging current to element to be charged

ABSTRACT

A semiconductor device supplying a charging current to a charging-target element includes: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type formed on a main surface of the semiconductor layer and having a first node coupled to a first electrode of the charging-target element and a second node coupled to a power supply potential node supplied with a power supply voltage; a second semiconductor region of the first conductivity type formed in a surface of the first semiconductor region at a distance from the semiconductor layer and having a third node coupled to the power supply potential node; and a charge carrier drift restriction portion restricting drift of charge carrier from the third node to the semiconductor layer.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. patent application Ser.No. 11/831,496 filed on Jul. 31, 2007, which claims priority to JP2007-063711 filed on Mar. 13, 2007, the entire contents of each of whichare herein incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device, and moreparticularly to a semiconductor device supplying a charging current toan element to be charged (hereinafter, also referred to as acharging-target element).

2. Description of the Background Art

A semiconductor device driving a power semiconductor element such as anIGBT (Insulated Gate Bipolar Transistor) has been developed. In such asemiconductor device, for example, a floating circuit is used as acircuit for driving a power semiconductor element which experiencesgreat potential fluctuation. In order to supply a voltage to thefloating circuit, for example, a bootstrap scheme has been adopted, inwhich a capacitor connected to a power supply voltage with a diode beinginterposed is employed as a power supply (see, for example, JapanesePatent Laying-Open Nos. 06-188372, 2006-005182 and 2004-047937 (PatentDocuments 1 to 3) and Kiyoto Watabe et al., “A Half-Bridge Driver ICwith Newly Designed High Voltage Diode,” Proceedings of The 13thInternational Symposium on Power Semiconductor Devices & ICs, ISPSD '01,Jun. 4-7, 2001, Osaka International Convention Center, JAPAN (Non-PatentDocument 1)).

According to the configuration described in Patent Documents 1 to 3,however, an n-type diffusion region serving as a path of the chargingcurrent from the power supply to the capacitor is narrowed by extensionof a depletion layer, and therefore, the charging current becomessmaller.

Meanwhile, Non-Patent Document 1 fails to suggest prevention of powerloss caused as a result that holes injected from a p-type diffusionregion to an n-type diffusion region, the p-type diffusion region andthe n-type diffusion region constituting the diode, flow toward a p⁻type substrate not toward the capacitor.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor devicecapable of efficiently supplying a charging current to an element to becharged.

A semiconductor device according to one aspect of the present inventionis directed to a semiconductor device supplying a charging current to acharging-target element, including: a semiconductor layer of a firstconductivity type; a first semiconductor region of a second conductivitytype formed on a main surface of the semiconductor layer and having afirst node coupled to a first electrode of the charging-target elementand a second node coupled to a power supply potential node supplied witha power supply voltage; a second semiconductor region of the firstconductivity type formed in a surface of the first semiconductor regionat a distance from the semiconductor layer and having a third nodecoupled to the power supply potential node; and a charge carrier driftrestriction portion restricting drift of charge carrier from the thirdnode to the semiconductor layer.

In addition, a semiconductor device according to yet another aspect ofthe present invention is directed to a semiconductor device supplying acharging current to a charging-target element, including: asemiconductor layer of a first conductivity type; a first semiconductorregion of a second conductivity type formed on a main surface of thesemiconductor layer and having a first node coupled to a first electrodeof the charging-target element; a second semiconductor region of thefirst conductivity type formed in a surface of the first semiconductorregion at a distance from the semiconductor layer and having a thirdnode and a fourth node coupled to a power supply potential node suppliedwith a power supply voltage; and a charge carrier drift restrictionportion restricting drift of charge carrier from the third node and thefourth node to the semiconductor layer.

In addition, a semiconductor device according to yet another aspect ofthe present invention is directed to a semiconductor device supplying acharging current to a charging-target element, including: a resistorhaving a first end coupled to a power supply potential node suppliedwith a power supply voltage; a first transistor having a firstconducting electrode coupled to a second end of the resistor, a secondconducting electrode coupled to a ground potential node supplied with aground voltage, and a control electrode coupled to a first electrode ofthe charging-target element; and a second transistor having a firstconducting electrode coupled to the power supply potential node, asecond conducting electrode coupled to the first electrode of thecharging-target element, and a control electrode coupled to the secondend of the resistor.

According to the present invention, the charging current can efficientlybe supplied to the element to be charged.

The foregoing and other objects, features, aspects and advantages of thepresent invention will become more apparent from the following detaileddescription of the present invention when taken in conjunction with theaccompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 1 of the present invention.

FIG. 2 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 1 of the present invention.

FIG. 3 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 2 of the present invention.

FIG. 4 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 3 of the present invention.

FIG. 5 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 3 of the present invention.

FIG. 6 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 4 of the present invention.

FIG. 7 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 5 of the present invention.

FIG. 8 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 5 of the present invention.

FIG. 9 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 6 of the present invention.

FIG. 10 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 7 of the present invention.

FIG. 11 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 8 of the present invention.

FIG. 12 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 8 of the present invention.

FIG. 13 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 9 of the present invention.

FIG. 14 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 10 of the present invention.

FIG. 15 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 10 of the presentinvention.

FIG. 16 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 11 of the present invention.

FIG. 17 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 12 of the present invention.

FIG. 18 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 13 of the present invention.

FIG. 19 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 14 of the present invention.

FIG. 20 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 14 of the presentinvention.

FIG. 21 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 15 of the present invention.

FIG. 22 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 15 of the presentinvention.

FIG. 23 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 16 of the present invention.

FIG. 24 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 17 of the present invention.

FIG. 25 is a cross-sectional view showing a configuration of asemiconductor device according to Embodiment 18 of the presentinvention.

FIG. 26 is a cross-sectional view showing a configuration of asemiconductor device according to Embodiment 19 of the presentinvention.

FIG. 27 is a cross-sectional view showing a configuration of asemiconductor device according to Embodiment 20 of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

An embodiment of the present invention will be described hereinafterwith reference to the drawings. It is noted that the same orcorresponding elements have the same reference characters allotted, anddescription thereof will not be repeated.

<Embodiment 1>

[Configuration and Basic Operation]

FIG. 1 is a circuit diagram showing a configuration of a semiconductordevice according to Embodiment 1 of the present invention.

Referring to FIG. 1, a semiconductor device 101 includes a PNPtransistor TR1, a junction field-effect transistor (JFET) TR2, a diodeD1, and a resistor (charge carrier drift restriction portion) R.

A drive device 201 includes a high-voltage side drive circuit 51 and alow-voltage side drive circuit 52. High-voltage side drive circuit 51includes a P-channel MOS transistor TR51, an N-channel MOS transistorTR52, a capacitor (charging-target element) C, a power supply voltageterminal T1, and a reference voltage terminal T2. Low-voltage side drivecircuit 52 includes a P-channel MOS transistor TR53 and an N-channel MOStransistor TR54.

A power conversion device 202 includes a high-voltage side powersemiconductor element TR101 and a low-voltage side power semiconductorelement TR102.

It is noted that drive device 201 may include a bipolar transistorinstead of the MOS transistor. Alternatively, semiconductor device 101may further include capacitor C, high-voltage side drive circuit 51,drive device 201, or drive device 201 and power conversion device 202.

Power supply potential nodes NL1 and NL2 are supplied with a powersupply voltage Vcc. A high-voltage node HV is supplied with a highvoltage HV, for example, of several hundred volts. Ground potentialnodes NG1 to NG3 are supplied with a ground voltage V sub.

Resistor R has a first end connected to power supply potential node NL1.Diode D1 has an anode connected to power supply potential node NL1. PNPtransistor TR1 has an emitter (conducting electrode) connected to asecond end of resistor R, a collector (conducting electrode) connectedto ground potential node NG1, and a base (control electrode) connectedto a first electrode of capacitor C. Junction field-effect transistorTR2 has the drain (conducting electrode) connected to a cathode of diodeD1, the source (conducting electrode) connected to the first electrodeof capacitor C, and the gate (control electrode) connected to the secondend of resistor R.

Capacitor C has the first electrode connected to power supply voltageterminal T1 of high-voltage side drive circuit 51, and a secondelectrode connected to reference voltage terminal T2 of high-voltageside drive circuit 51. More specifically, P-channel MOS transistor TR51has the source connected to the first electrode of capacitor C, and thedrain connected to the drain of N-channel MOS transistor TR52 and thegate of high-voltage side power semiconductor element TR101. N-channelMOS transistor TR52 has the source connected to the second electrode ofcapacitor C.

High-voltage side drive circuit 51 has reference voltage terminal T2connected to a connection point of high-voltage side power semiconductorelement TR101 and low-voltage side power semiconductor element TR102connected in series.

In low-voltage side drive circuit 52, P-channel MOS transistor TR53 hasthe source connected to power supply potential node NL2, and the drainconnected to the drain of N-channel MOS transistor TR54 and the gate oflow-voltage side power semiconductor element TR102. P-channel MOStransistor TR54 has the source connected to ground potential node NG3.

High-voltage side power semiconductor element TR101 has the drainconnected to a high-voltage node NH. Low-voltage side powersemiconductor element TR102 has the source connected to ground potentialnode NG2.

High-voltage side drive circuit 51 supplies a voltage to the gate ofhigh-voltage side power semiconductor element TR101 based on a controlvoltage supplied to the gate of each of P-channel MOS transistor TR51and N-channel MOS transistor TR52. Low-voltage side drive circuit 52supplies a voltage to the gate of low-voltage side power semiconductorelement TR102 based on a control voltage supplied to the gate of each ofP-channel MOS transistor TR53 and N-channel MOS transistor TR54.

FIG. 2 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 1 of the present invention.

Referring to FIG. 2, semiconductor device 101 includes a p⁻ typesubstrate (semiconductor layer) 1, an n-type diffusion region (firstsemiconductor region) 2, a p-type diffusion region (second semiconductorregion) 3, n⁺ type diffusion regions 4 and 5, a p-type diffusion region6, n⁺ type diffusion regions 7 and 8, resistor R, diode D1, contacts CT1to CT7, p⁺ type diffusion regions 21 to 23, gate electrodes G1 and G2,gate insulating films GF1 and GF2, and an oxide film F.

A dotted line in FIG. 2 indicates a boundary of a depletion layerextending from a junction surface between p⁻ type substrate 1 and n-typediffusion region 2.

P⁻ type substrate 1 is connected to ground potential node NG1 throughcontact CT7. N-type diffusion region 2 is formed on a main surface of p⁻type substrate 1.

P-type diffusion region 3 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1.P-type diffusion region 3 has a node N3 coupled to power supplypotential node NL1.

N⁺ type diffusion region 4 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1 andp-type diffusion region 3. N⁺ type diffusion region 4 has a node N2coupled to power supply potential node NL1. Namely, n⁺ type diffusionregion 4 is connected to power supply potential node NL1 through contactCT2 and diode D1.

N⁺ type diffusion region 5 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1,p-type diffusion region 3, and n⁺ type diffusion region 4. N⁺ typediffusion region 5 has a node N1 coupled to the first electrode ofcapacitor C. Namely, n⁺ type diffusion region 5 is connected to thefirst electrode of capacitor C through contact CT3.

Here, semiconductor device 101 may not include n⁺ type diffusion regions4 and 5. In this case, n-type diffusion region 2 has node N1 coupled tothe first electrode of capacitor C and node N2 coupled to power supplypotential node NL1.

Resistor R has the first end connected to power supply potential nodeNL1 and the second end connected to p-type diffusion region 3 throughcontact CT1. Resistor R restricts drift of holes (charge carrier) fromnode N3 to p⁻ type substrate 1.

PNP transistor TR1 has a collector formed of p⁻ type substrate 1, a baseformed of n-type diffusion region 2, and an emitter formed of p-typediffusion region 3. PNP transistor TR1 supplies the charging current tocapacitor C through n-type diffusion region 2.

Junction field-effect transistor TR2 has the gate formed of n-typediffusion region 2 and p-type diffusion region 3, the drain formed ofn-type diffusion region 2 and coupled to power supply potential node NL1through node N2, and the source formed of n-type diffusion region 2 andcoupled to the first electrode of capacitor C through node N1. Junctionfield-effect transistor TR2 supplies the charging current to capacitor Cthrough n-type diffusion region 2.

Diode D1 has a cathode (n-type electrode) connected to the drain ofjunction field-effect transistor TR2 through contact CT2 and an anode(p-type electrode) connected to power supply potential node NL1 and thefirst end of resistor R.

P⁺ type diffusion region 21 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1,p-type diffusion region 3, and n⁺ type diffusion region 4. P⁺ typediffusion region 21 is connected to the first electrode of capacitor Cthrough contact CT3.

P⁺ type diffusion region 22 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1,p-type diffusion region 3, n⁺ type diffusion regions 4 and 5, and p⁺type diffusion region 21. P⁺ type diffusion region 22 is connected to n⁺type diffusion region 7 through contacts CT5 and CT6.

P-channel MOS transistor TR51 has gate electrode G1 formed on thesurface of n-type diffusion region 2 with gate insulating film GF1 beinginterposed, the source formed of p⁺ type diffusion region 21, and thedrain formed of p⁺ type diffusion region 22. Gate electrode G1 isprovided, opposed to a channel region in n-type diffusion region 2 lyingbetween p⁺ type diffusion regions 21 and 22, with gate insulating filmGF1 being interposed.

P-type diffusion region 6 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1,p-type diffusion region 3, n⁺ type diffusion regions 4 and 5, p⁺ typediffusion region 21, and p⁺ type diffusion region 22.

N⁺ type diffusion region 7 is formed in the surface of p-type diffusionregion 6 at a distance from the main surface of p⁻ type substrate 1 andn-type diffusion region 2. N⁺ type diffusion region 7 is connected to p⁺type diffusion region 22 through contacts CT5 and CT6.

N⁺ type diffusion region 8 is formed in the surface of p-type diffusionregion 6 at a distance from the main surface of p⁻ type substrate 1,n-type diffusion region 2, and n⁺ type diffusion region 7. N⁺ typediffusion region 8 is connected to the second electrode of capacitor Cthrough contact CT4.

N-channel MOS transistor TR52 has gate electrode G2 formed on thesurface of p-type diffusion region 6 with gate insulating film GF2 beinginterposed, the drain formed of n⁺ type diffusion region 7, and thesource formed of n⁺ type diffusion region 8. Gate electrode G2 isprovided, opposed to a channel region in p-type diffusion region 6 lyingbetween n⁺ type diffusion regions 7 and 8, with gate insulating film GF2being interposed.

P⁺ type diffusion region 23 is formed in the surface of p-type diffusionregion 6 at a distance from the main surface of p⁻ type substrate 1 andn⁺ type diffusion region 7. P⁺ type diffusion region 23 is connected tothe second electrode of capacitor C through contact CT4.

P-type diffusion regions 3 and 6 have an impurity concentration higherthan p⁻ type substrate 1. P⁺ type diffusion regions 21 to 23 have animpurity concentration higher than p-type diffusion regions 3 and 6. N⁺type diffusion regions 4, 5, 7, and 8 have an impurity concentrationhigher than n-type diffusion region 2.

Semiconductor device 101 is designed to adapt to a power conversioncircuit in which a withstand voltage, for example, of 600V is required.Here, the impurity concentration of p⁻ type substrate 1 is set in arange from 5×10¹³/cm³ to 5×10¹⁴/cm³, and power supply voltage Vcc isset, for example, in a range from 15V to 30V.

Strictly speaking, the gate electrode of junction field-effecttransistor TR2 is formed of p⁻ type substrate 1 coupled to groundpotential node NG1 and p-type diffusion region 3 coupled to power supplypotential node NL1. As the impurity concentration of p-type diffusionregion 3 is higher than that of p⁻ type substrate 1, however, influenceof the depletion layer extending from p-type diffusion region 3 isgreater than influence of the depletion layer extending from p⁻ typesubstrate 1. Therefore, for the sake of brevity, description is givenassuming that the gate electrode of junction field-effect transistor TR2is formed of p-type diffusion region 3 and n-type diffusion region 2.

[Operation]

An operation of the semiconductor device according to Embodiment 1 ofthe present invention when it charges capacitor C will now be described.Power supply voltage Vcc is set, for example, to 15V, and high voltageHV is set, for example, to 300V. A potential Vs of reference voltageterminal T2 of high-voltage side drive circuit 51 varies, for example,in a range from 0V to 300V.

In addition, a potential Vb of power supply voltage terminal T1 ofhigh-voltage side drive circuit 51 is higher than potential Vs by avoltage held by capacitor C.

Here, potential Vs repeatedly rises and lowers in response to aswitching operation of high-voltage side power semiconductor elementTR101 and low-voltage side power semiconductor element TR102.Accordingly, potential Vb also repeatedly rises and lowers incorrespondence with potential Vs. In other words, potential Vbalternately repeats a state of Vb<Vcc and a state of Vb>Vcc.

Here, if potential Vb lowers and becomes lower than power supply voltageVcc, PNP transistor TR1 turns on. Namely, a forward bias voltage isapplied to a pn junction formed by p-type diffusion region 3 and n-typediffusion region 2. Then, holes are injected from p-type diffusionregion 3 to n-type diffusion region 2. Namely, a current is suppliedfrom power supply potential node NL1 to capacitor C through resistor R,p-type diffusion region 3, n-type diffusion region 2, and n⁺ typediffusion region 5, thus charging capacitor C.

In addition, when potential Vb lowers and becomes lower than powersupply voltage Vcc, junction field-effect transistor TR2 supplies acurrent to capacitor C. Namely, the current is supplied from powersupply potential node NL1 to capacitor C through diode D1, n⁺ typediffusion region 4, n-type diffusion region 2, and n⁺ type diffusionregion 5, thus charging capacitor C.

On the other hand, if potential Vb rises and exceeds power supplyvoltage Vcc, a reverse bias voltage is applied to the pn junction formedby p-type diffusion region 3 and n-type diffusion region 2. Accordingly,a reverse current from capacitor C to power supply potential node NL1through n⁺ type diffusion region 5, n-type diffusion region 2, p-typediffusion region 3, and resistor R is blocked.

In addition, when potential Vb rises and exceeds power supply voltageVcc, a reverse bias voltage is applied to diode D1. Accordingly, thereverse current from capacitor C to power supply potential node NL1through n⁺ type diffusion region 5, n-type diffusion region 2, n⁺ typediffusion region 4, and diode D1 is blocked. Then, junction field-effecttransistor TR2 pinches off before potential Vb further rises and reachesa breakdown voltage of diode D1. Namely, a current path is closed by thedepletion layer extending in n-type diffusion region 2, so that thevoltage applied to diode D1 is prevented from reaching the breakdownvoltage.

Thus, each time potential Vb attains to power supply voltage Vcc orlower, capacitor C is charged. Therefore, capacitor C can serve as thepower supply for high-voltage side drive circuit 51 serving as thefloating circuit. In addition, the reverse current from capacitor C topower supply potential node NL1 can be blocked.

Here, in PNP transistor TR1 formed of p⁻ type substrate 1, n-typediffusion region 2 and p-type diffusion region 3, the current fromp-type diffusion region 3 to p⁻ type substrate 1, which is the collectorcurrent, is greater than the current from p-type diffusion region 3 tocapacitor C, which is the base current, by hFE (current amplificationfactor) of PNP transistor TR1. Namely, in charging capacitor C, most ofholes injected from p-type diffusion region 3 to n-type diffusion region2 flow toward p⁻ type substrate 1. Accordingly, assuming thatsemiconductor device 101 does not include resistor R, even if a largeamount of current flows from power supply potential node NL1 to contactCT1 during charging capacitor C, only a small amount of current reachescapacitor C. Therefore, power loss of the power supply supplying powersupply voltage Vcc is considerably large.

The semiconductor device according to Embodiment 1 of the presentinvention, however, includes resistor R connected between power supplypotential node NL1 and p-type diffusion region 3. According to such aconfiguration, the potential of contact CT1 is smaller than power supplyvoltage Vcc by an amount of voltage lowering in resistor R. Therefore,according to the semiconductor device in Embodiment 1 of the presentinvention, an amount of holes injected from p-type diffusion region 3 ton-type diffusion region 2 can be restricted and power loss of the powersupply can be reduced.

Meanwhile, with such a configuration as simply including resistor Rconnected between power supply potential node NL1 and p-type diffusionregion 3, an amount of holes that flow from power supply potential nodeNL1 into n-type diffusion region 2 through p-type diffusion region 3 isreduced by resistor R, and therefore, the charging current from powersupply potential node NL1 to capacitor C becomes smaller.

In the semiconductor device according to Embodiment 1 of the presentinvention, however, n⁺ type diffusion region 4 has node N2 coupled topower supply potential node NL1. According to such a configuration, asthe charging current can be supplied from junction field-effecttransistor TR2 formed of n-type diffusion region 2 and p-type diffusionregion 3 to capacitor C through n-type diffusion region 2, the chargingcurrent from power supply potential node NL1 to capacitor C can beprevented from becoming smaller.

Here, it is assumed that semiconductor device 101 does not includeresistor R and the potential of p-type diffusion region 3 is set to theground potential as in the configuration described in Patent Documents 1to 3. Here, even if potential Vb lowers and becomes smaller than powersupply voltage Vcc, the reverse bias voltage is applied to the pnjunction formed by p-type diffusion region 3 and n-type diffusion region2, and therefore, the depletion layer extends from p-type diffusionregion 3 in n-type diffusion region 2. Accordingly, an ON-stateresistance of junction field-effect transistor TR2, that is, aresistance between contacts CT1 and CT3, becomes greater, and thecharging current from junction field-effect transistor TR2 to capacitorC becomes smaller.

In the semiconductor device according to Embodiment 1 of the presentinvention, however, p-type diffusion region 3 is coupled to power supplypotential node NL1. According to such a configuration, when potential Vblowers and becomes lower than power supply voltage Vcc, the forward biasvoltage is applied to the pn junction formed by p-type diffusion region3 and n-type diffusion region 2, and therefore, the depletion layer canbe prevented from extending from p-type diffusion region 3 in n-typediffusion region 2.

In addition, in the semiconductor device according to Embodiment 1 ofthe present invention, when potential Vb lowers and becomes lower thanpower supply voltage Vcc, the forward bias voltage is applied to the pnjunction formed by p-type diffusion region 3 and n-type diffusion region2, and therefore, holes are injected from p-type diffusion region 3 ton-type diffusion region 2. These injected holes cause conductivitymodulation in n-type diffusion region 2. Namely, electrons concentratedin n-type diffusion region 2 cause higher conductivity of n-typediffusion region 2. Therefore, in the semiconductor device according toEmbodiment 1 of the present invention, increase in the ON-stateresistance of junction field-effect transistor TR2 can be prevented, andthe charging current to capacitor C can be prevented from becomingsmaller.

In the semiconductor device according to Embodiment 1 of the presentinvention, by adjusting a resistance value of resistor R, an amount ofholes injected from p-type diffusion region 3 to n-type diffusion region2 as well as the ON-state resistance of junction field-effect transistorTR2 can appropriately be set.

As described above, in the semiconductor device according to Embodiment1 of the present invention, the charging current can efficiently besupplied to the charging-target element.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 2>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 1 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 1 except for the disclosure below.

FIG. 3 is a circuit diagram showing a configuration of the semiconductordevice according to Embodiment 2 of the present invention.

Referring to FIG. 3, a semiconductor device 102 is different fromsemiconductor device 101 according to Embodiment 1 of the presentinvention in further including a diode D2.

Diode D2 has an anode connected to p-type diffusion region 3, that is,the second end of resistor R, and a cathode connected to power supplypotential node NL1.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc, which may causeavalanche between n⁺ type diffusion region 4 and p-type diffusion region3.

In the semiconductor device according to Embodiment 2 of the presentinvention, however, diode D2 enters a forward bias state when potentialVb suddenly increases, and therefore, the potential of contact CT1 canbe prevented from becoming greater than power supply voltage Vcc.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 1, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 2 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 1 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 3>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 1 in additionallyincluding a transistor.

FIG. 4 is a circuit diagram showing a configuration of the semiconductordevice according to Embodiment 3 of the present invention.

Referring to FIG. 4, a semiconductor device 103 is different fromsemiconductor device 101 according to Embodiment 1 of the presentinvention in further including an NPN transistor TR11. NPN transistorTR11 has a collector connected to power supply potential node NL1, anemitter connected to the first electrode of capacitor C, and a baseconnected to the second end of resistor R.

FIG. 5 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 3 of the present invention.

Referring to FIG. 5, semiconductor device 103 is different fromsemiconductor device 101 according to Embodiment 1 of the presentinvention in further including an n⁺ type diffusion region 11 and acontact CT11.

N⁺ type diffusion region 11 is formed in the surface of p-type diffusionregion 3 at a distance from the main surface of p⁻ type substrate 1 andn-type diffusion region 2. N⁺ type diffusion region 11 has a node N4connected to power supply potential node NL1 through contact CT11.

NPN transistor TR11 has a collector formed of n⁺ type diffusion region11, a base formed of p-type diffusion region 3, and an emitter formed ofn-type diffusion region 2. NPN transistor TR11 supplies the chargingcurrent to capacitor C through n-type diffusion region 2.

According to such a configuration, the charging current supplied tocapacitor C is implemented as the sum of the charging current fromcontact CT1 to capacitor C resulting from holes injected from p-typediffusion region 3 to n-type diffusion region 2, the charging currentfrom contact CT2 to capacitor C supplied by junction field-effecttransistor TR2, and the charging current from contact CT11 to capacitorC supplied by NPN transistor TR11.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 1, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 3 of thepresent invention, as compared with semiconductor device 101 accordingto Embodiment 1 of the present invention, the resistance value of thecurrent path from power supply potential node NL1 to capacitor C canfurther be lowered, and the charging current can efficiently be suppliedto the charging-target element.

The semiconductor device according to Embodiment 3 of the presentinvention includes n⁺ type diffusion region 11, however, thesemiconductor device may not include n⁺ type diffusion region 11 as in asemiconductor device according to Embodiment 18 of the present inventionwhich will be described later. Here, p-type diffusion region 3 has nodeN4 connected to power supply potential node NL1 through contact CT11.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 4>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 3 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 3 except for the disclosure below.

FIG. 6 is a circuit diagram showing a configuration of the semiconductordevice according to Embodiment 4 of the present invention.

Referring to FIG. 6, a semiconductor device 104 is different fromsemiconductor device 103 according to Embodiment 3 of the presentinvention in further including a diode D11.

Diode D11 is a Schottky diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to power supply potential node NL1. A forward voltage of diodeD11 is smaller than the forward voltage of the pn junction formed byp-type diffusion region 3 and n⁺ type diffusion region 11.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc. Then, as theforward bias voltage is applied to the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11, the reverse currentmay flow from capacitor C to power supply potential node NL1.

The semiconductor device according to Embodiment 4 of the presentinvention, however, includes diode D11 of which forward voltage issmaller than the forward voltage of the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11. According to such aconfiguration, application of the forward bias voltage to the pnjunction formed by p-type diffusion region 3 and n⁺ type diffusionregion 11 can be prevented, and therefore, the reverse current can beprevented from flowing from capacitor C to power supply potential nodeNL1.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 3, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 4 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 3 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 5>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 3 in additionallyincluding a transistor. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 3 except for the disclosure below.

FIG. 7 is a circuit diagram showing a configuration of the semiconductordevice according to Embodiment 5 of the present invention.

Referring to FIG. 7, a semiconductor device 105 is different fromsemiconductor device 103 according to Embodiment 3 of the presentinvention in further including an N-channel MOS transistor TR21.

N-channel MOS transistor TR21 has the drain connected to power supplypotential node NL1, the source connected to the first electrode ofcapacitor C, and the gate connected to power supply potential node NL1.

FIG. 8 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 5 of the present invention.

Referring to FIG. 8, semiconductor device 105 is different fromsemiconductor device 103 according to Embodiment 3 of the presentinvention in further including a gate electrode G21 and a gateinsulating film GF21.

N-channel MOS transistor TR21 has gate electrode G21 formed on thesurface of p-type diffusion region 3 with gate insulating film GF21being interposed, the source formed of n-type diffusion region 2, andthe drain formed of n⁺ type diffusion region 11. Gate electrode G21 isprovided, opposed to a channel region in p-type diffusion region 3 lyingbetween n-type diffusion region 2 and n⁺ type diffusion region 11, withgate insulating film GF21 being interposed. N-channel MOS transistorTR21 supplies the charging current to capacitor C through n-typediffusion region 2.

When potential Vb lowers and becomes lower than power supply voltageVcc, a positive bias voltage is applied to gate electrode G21 by anamount of voltage lowering due to the current that flows throughresistor R. When the positive bias voltage exceeds a threshold voltageof N-channel MOS transistor TR21, N-channel MOS transistor TR21 turnson, and N-channel MOS transistor TR21 supplies the charging current tocapacitor C through n-type diffusion region 2.

According to such a configuration, the charging current supplied tocapacitor C is implemented as the sum of the charging current fromcontact CT1 to capacitor C resulting from holes injected from p-typediffusion region 3 to n-type diffusion region 2, the charging currentfrom contact CT2 to capacitor C supplied by junction field-effecttransistor TR2, the charging current from contact CT11 to capacitor Csupplied by NPN transistor TR11, and the charging current from contactCT11 to capacitor C supplied by N-channel MOS transistor TR21.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 3, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 5 of thepresent invention, as compared with semiconductor device 103 accordingto Embodiment 3 of the present invention, the resistance value of thecurrent path from power supply potential node NL1 to capacitor C canfurther be lowered, and the charging current can efficiently be suppliedto the charging-target element.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 6>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 5 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 5 except for the disclosure below.

FIG. 9 is a circuit diagram showing a configuration of the semiconductordevice according to Embodiment 6 of the present invention.

Referring to FIG. 9, a semiconductor device 106 is different fromsemiconductor device 105 according to Embodiment 5 of the presentinvention in further including a diode D21.

Diode D21 is a Zener diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to power supply potential node NL1. Diode D21 clamps anapplied reverse voltage to a prescribed voltage value.

According to such a configuration, application of a transientovervoltage to gate electrode G21 of N-channel MOS transistor TR21 canbe prevented, and gate breakdown of N-channel MOS transistor TR21 can beprevented.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 5, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 6 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 5 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 7>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 5 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 5 except for the disclosure below.

FIG. 10 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 7 of the present invention.

Referring to FIG. 10, a semiconductor device 107 is different fromsemiconductor device 105 according to Embodiment 5 of the presentinvention in further including a diode D22.

Diode D22 is a Schottky diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to power supply potential node NL1. A forward voltage of diodeD22 is smaller than the forward voltage of the pn junction formed byp-type diffusion region 3 and n⁺ type diffusion region 11.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc. Then, as theforward bias voltage is applied to the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11, the reverse currentmay flow from capacitor C to power supply potential node NL1.

The semiconductor device according to Embodiment 7 of the presentinvention, however, includes diode D22 of which forward voltage issmaller than the forward voltage of the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11. According to such aconfiguration, application of the forward bias voltage to the pnjunction formed by p-type diffusion region 3 and n⁺ type diffusionregion 11 can be prevented, and therefore, the reverse current can beprevented from flowing from capacitor C to power supply potential nodeNL1.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 5, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 7 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 5 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 8>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 1 in including abipolar transistor instead of the junction field-effect transistor. Thesemiconductor device in the present embodiment is the same as thesemiconductor device according to Embodiment 1 except for the disclosurebelow.

[Configuration and Basic Operation]

FIG. 11 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 8 of the present invention.

Referring to FIG. 11, a semiconductor device 108 includes PNP transistorTR1, an NPN transistor TR31, and resistor (charge carrier driftrestriction portion) R.

Resistor R has the first end connected to power supply potential nodeNL1. PNP transistor TR1 has the emitter (conducting electrode) connectedto the second end of resistor R, the collector (conducting electrode)connected to ground potential node NG1, and the base (control electrode)connected to the first electrode of capacitor C. NPN transistor TR31 hasa collector connected to power supply potential node NL1, an emitterconnected to the first electrode of capacitor C, and a base connected tothe second end of resistor R.

FIG. 12 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 8 of the present invention.

Referring to FIG. 12, semiconductor device 108 includes p⁻ typesubstrate (semiconductor layer) 1, n-type diffusion region (firstsemiconductor region) 2, p-type diffusion region (second semiconductorregion) 3, n⁺ type diffusion region 5, p-type diffusion region 6, n⁺type diffusion regions 7 and 8, resistor R, contacts CT1, CT3 to CT7,and CT11, n⁺ type diffusion region (charge carrier drift restrictionportion) 11, p⁺ type diffusion regions 21 to 23, gate electrodes G1 andG2, gate insulating films GF1 and GF2, and oxide film F.

A dotted line in FIG. 12 indicates a boundary of a depletion layerextending from the junction surface between p⁻ type substrate 1 andn-type diffusion region 2.

P⁻ type substrate 1 is connected to ground potential node NG1 throughcontact CT7. N-type diffusion region 2 is formed on the main surface ofp⁻ type substrate 1.

P-type diffusion region 3 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1.P-type diffusion region 3 has node N3 coupled to power supply potentialnode NL1.

N⁺ type diffusion region 11 is formed in the surface of p-type diffusionregion 3 at a distance from the main surface of p⁻ type substrate 1 andn-type diffusion region 2. N⁺ type diffusion region 11 has node N4coupled to power supply potential node NL1 through contact CT11. N⁺ typediffusion region 11 restricts drift of holes (charge carrier) from nodeN4 to p⁻ type substrate 1.

N⁺ type diffusion region 5 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1 andp-type diffusion region 3. N⁺ type diffusion region 5 has node N1coupled to the first electrode of capacitor C. Namely, n⁺ type diffusionregion 5 is connected to the first electrode of capacitor C throughcontact CT3.

Here, semiconductor device 108 may not include n⁺ type diffusion region5. In this case, n-type diffusion region 2 has node N1 coupled to thefirst electrode of capacitor C.

Resistor R has the first end connected to power supply potential nodeNL1 and the second end connected to p-type diffusion region 3 throughCT1. Resistor R restricts drift of holes (charge carrier) from node N3to p⁻ type substrate 1.

PNP transistor TR1 has the collector formed of p⁻ type substrate 1, thebase formed of n-type diffusion region 2, and the emitter formed ofp-type diffusion region 3. PNP transistor TR1 supplies the chargingcurrent to capacitor C through n-type diffusion region 2.

NPN transistor TR31 has the collector formed of n⁺ type diffusion region11, the base formed of p-type diffusion region 3, and the emitter formedof n-type diffusion region 2. NPN transistor TR31 supplies the chargingcurrent to capacitor C through n-type diffusion region 2.

P⁺ type diffusion region 21 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1 andp-type diffusion region 3. P⁺ type diffusion region 21 is connected tothe first electrode of capacitor C through contact CT3.

P⁺ type diffusion region 22 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1,p-type diffusion region 3, and p⁺ type diffusion region 21. P⁺ typediffusion region 22 is connected to n⁺ type diffusion region 7 throughcontacts CT5 and CT6.

P-channel MOS transistor TR51 has gate electrode G1 formed on thesurface of n-type diffusion region 2 with gate insulating film GF1 beinginterposed, the source formed of p⁺ type diffusion region 21, and thedrain formed of p⁺ type diffusion region 22. Gate electrode G1 isprovided, opposed to the channel region in n-type diffusion region 2lying between p⁺ type diffusion regions 21 and 22, with gate insulatingfilm GF1 being interposed.

P-type diffusion region 6 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1,p-type diffusion region 3, n⁺ type diffusion region 5, p⁺ type diffusionregion 21, and p⁺ type diffusion region 22.

N⁺ type diffusion region 7 is formed in the surface of p-type diffusionregion 6 at a distance from the main surface of p⁻ type substrate 1 andn-type diffusion region 2. N⁺ type diffusion region 7 is connected to p⁺type diffusion region 22 through contacts CT5 and CT6.

N⁺ type diffusion region 8 is formed in the surface of p-type diffusionregion 6 at a distance from the main surface of p⁻ type substrate 1,n-type diffusion region 2, and n⁺ type diffusion region 7. N⁺ typediffusion region 8 is connected to the second electrode of capacitor Cthrough contact CT4

N-channel MOS transistor TR52 has gate electrode G2 formed on thesurface of p-type diffusion region 6 with gate insulating film GF2 beinginterposed, the drain formed of n⁺ type diffusion region 7, and thesource formed of n⁺ type diffusion region 8. Gate electrode G2 isprovided, opposed to the channel region in p-type diffusion region 6lying between n⁺ type diffusion regions 7 and 8, with gate insulatingfilm GF2 being interposed.

P⁺ type diffusion region 23 is formed in the surface of p-type diffusionregion 6 at a distance from the main surface of p⁻ type substrate 1 andn⁺ type diffusion region 7. P⁺ type diffusion region 23 is connected tothe second electrode of capacitor C through contact CT4.

P-type diffusion regions 3 and 6 have an impurity concentration higherthan p⁻ type substrate 1. P⁺ type diffusion regions 21 to 23 have animpurity concentration higher than p-type diffusion regions 3 and 6. N⁺type diffusion regions 5, 7, 8, and 11 have an impurity concentrationhigher than n-type diffusion region 2. Semiconductor device 108 isdesigned to adapt to a power conversion circuit in which a withstandvoltage, for example, of 600V is required. Here, the impurityconcentration of p⁻ type substrate 1 is set in a range from 5×10¹³/cm³to 5×10¹⁴/cm³, and power supply voltage Vcc is set, for example, in arange from 15V to 30V.

[Operation]

An operation of the semiconductor device according to Embodiment 8 ofthe present invention when it charges capacitor C will now be described.

Power supply voltage Vcc is set, for example, to 15V, and high voltageHV is set, for example, to 300V. Potential Vs of reference voltageterminal T2 of high-voltage side drive circuit 51 varies, for example,in a range from 0V to 300V.

In addition, potential Vb of power supply voltage terminal T1 ofhigh-voltage side drive circuit 51 is higher than potential Vs by avoltage held by capacitor C.

Here, potential Vs repeatedly rises and lowers in response to theswitching operation of high-voltage side-power semiconductor elementTR101 and low-voltage side power semiconductor element TR102.Accordingly, potential Vb also repeatedly rises and lowers incorrespondence with potential Vs. In other words, potential Vbalternately repeats a state of Vb<Vcc and a state of Vb>Vcc.

Here, if potential Vb lowers and becomes lower than power supply voltageVcc, PNP transistor TR1 turns on. Namely, a forward bias voltage isapplied to the pn junction formed by p-type diffusion region 3 andn-type diffusion region 2. Then, holes are injected from p-typediffusion region 3 to n-type diffusion region 2. Namely, a current issupplied from power supply potential node NL1 to capacitor C throughresistor R, p-type diffusion region 3, n-type diffusion region 2, and n⁺type diffusion region 5, thus charging capacitor C.

In addition, when potential Vb lowers and becomes lower than powersupply voltage Vcc, NPN transistor TR31 supplies a current to capacitorC. Namely, the current is supplied from power supply potential node NL1to capacitor C through n⁺ type diffusion region 11, p-type diffusionregion 3, n-type diffusion region 2, and n⁺ type diffusion region 5,thus charging capacitor C.

On the other hand, if potential Vb rises and exceeds power supplyvoltage Vcc, a reverse bias voltage is applied to the pn junction formedby p-type diffusion region 3 and n-type diffusion region 2. Accordingly,a reverse current from capacitor C to power supply potential node NL1through n⁺ type diffusion region 5, n-type diffusion region 2, p-typediffusion region 3, and resistor R is blocked. Similarly, the reversecurrent from capacitor C to power supply potential node NL1 through n⁺type diffusion region 5, n-type diffusion region 2, p-type diffusionregion 3, and n⁺ type diffusion region 11 is also blocked.

Thus, each time potential Vb attains to power supply voltage Vcc orlower, capacitor C is charged. Therefore, capacitor C can serve as thepower supply for high-voltage side drive circuit 51 serving as thefloating circuit. In addition, the reverse current from capacitor C topower supply potential node NL1 can be blocked.

Here, in PNP transistor TR1 formed of p⁻ type substrate 1, n-typediffusion region 2 and p-type diffusion region 3, the current fromp-type diffusion region 3 to p⁻ type substrate 1, which is the collectorcurrent, is greater than the current from p-type diffusion region 3 tocapacitor C, which is the base current, by hFE (current amplificationfactor) of PNP transistor TR1. Namely, in charging capacitor C, most ofholes injected from p-type diffusion region 3 to n-type diffusion region2 flow toward p⁻ type substrate 1. Accordingly, assuming thatsemiconductor device 108 does not include resistor R, even if a largeamount of current flows from power supply potential node NL1 to contactCT1 during charging capacitor C, only a small amount of current reachescapacitor C. Therefore, power loss of the power supply supplying powersupply voltage Vcc is considerably large.

The semiconductor device according to Embodiment 8 of the presentinvention, however, includes resistor R connected between power supplypotential node NL1 and p-type diffusion region 3. According to such aconfiguration, the potential of contact CT1 is smaller than power supplyvoltage Vcc by an amount of voltage lowering in resistor R. Therefore,in the semiconductor device according to Embodiment 8 of the presentinvention, an amount of holes injected from p-type diffusion region 3 ton-type diffusion region 2 can be restricted and power loss of the powersupply can be reduced.

Meanwhile, with such a configuration as simply including resistor Rconnected between power supply potential node NL1 and p-type diffusionregion 3, an amount of holes that flow from power supply potential nodeNL1 into n-type diffusion region 2 through p-type diffusion region 3 isreduced by resistor R, and therefore, the charging current from powersupply potential node NL1 to capacitor C becomes smaller.

The semiconductor device according to Embodiment 8 of the presentinvention, however, includes n⁺ type diffusion region 11 formed in thesurface of p-type diffusion region 3 at a distance from the main surfaceof p⁻ type substrate 1 and n-type diffusion region 2 and coupled topower supply potential node NL1. According to such a configuration, asthe charging current can be supplied from NPN transistor TR31 formed ofn⁺ type diffusion region 11, p-type diffusion region 3 and n-typediffusion region 2 to capacitor C through n-type diffusion region 2, thecharging current from power supply potential node NL1 to capacitor C canbe prevented from becoming smaller.

In the configuration including the junction field-effect transistorsupplying the charging current to capacitor C as in the configurationdescribed in Non-Patent Document 1, if potential Vb lowers and becomeslower than power supply voltage Vcc, the depletion layer extends fromp-type diffusion region 3 in n-type diffusion region 2. Accordingly, aresistance of n-type diffusion region 2 increases, and the chargingcurrent to capacitor C becomes smaller.

Unlike semiconductor device 101 according to Embodiment 1 of the presentinvention, however, the semiconductor device according to Embodiment 8of the present invention does not include n⁺ type diffusion region 4coupled to power supply potential node NL1, and therefore, the junctionfield-effect transistor is not formed. Namely, as the depletion layercan be prevented from extending from p-type diffusion region 3 in n-typediffusion region 2, the resistance of n-type diffusion region 2 can belowered, and the charging current from power supply potential node NL1to capacitor C can be prevented from becoming smaller.

In addition, in the semiconductor device according to Embodiment 8 ofthe present invention, p-type diffusion region 3 is coupled to powersupply potential node NL1. According to such a configuration, whenpotential Vb lowers and becomes lower than power supply voltage Vcc, theforward bias voltage is applied to the pn junction formed by p-typediffusion region 3 and n-type diffusion region 2, and therefore, thedepletion layer can be prevented from extending from p-type diffusionregion 3 in n-type diffusion region 2.

In addition, in the semiconductor device according to Embodiment 8 ofthe present invention, when potential Vb lowers and becomes lower thanpower supply voltage Vcc, the forward bias voltage is applied to the pnjunction formed by p-type diffusion region 3 and n-type diffusion region2, and therefore, holes are injected from p-type diffusion region 3 ton-type diffusion region 2. These injected holes cause conductivitymodulation in n-type diffusion region 2. Namely, concentrated electronsin n-type diffusion region 2 cause higher conductivity of n-typediffusion region 2. Therefore, in the semiconductor device according toEmbodiment 8 of the present invention, increase in the resistance ofn-type diffusion region 2 can be prevented, and the charging current tocapacitor C can be prevented from becoming smaller.

In the semiconductor device according to Embodiment 8 of the presentinvention, by adjusting a resistance value of resistor R, an amount ofholes injected from p-type diffusion region 3 to n-type diffusion region2 can appropriately be set.

As described above, in the semiconductor device according to Embodiment8 of the present invention, the charging current can efficiently besupplied to the charging-target element.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 9>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 8 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 8 except for the disclosure below.

FIG. 13 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 9 of the present invention.

Referring to FIG. 13, a semiconductor device 109 is different fromsemiconductor device 108 according to Embodiment 8 of the presentinvention in further including a diode D31.

Diode D31 is a Schottky diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to power supply potential node NL1. A forward voltage of diodeD31 is smaller than the forward voltage of the pn junction formed byp-type diffusion region 3 and n⁺ type diffusion region 11.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc. Then, as theforward bias voltage is applied to the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11, the reverse currentmay flow from capacitor C to power supply potential node NL1.

The semiconductor device according to Embodiment 9 of the presentinvention, however, includes diode D31 of which forward voltage issmaller than the forward voltage of the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11. According to such aconfiguration, application of the forward bias voltage to the pnjunction formed by p-type diffusion region 3 and n⁺ type diffusionregion 11 can be prevented, and therefore, the reverse current can beprevented from flowing from capacitor C to power supply potential nodeNL1.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 8, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 9 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 8 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 10>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 8 in additionallyincluding a transistor. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 8 except for the disclosure below.

FIG. 14 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 10 of the presentinvention.

Referring to FIG. 14, a semiconductor device 110 is different fromsemiconductor device 108 according to Embodiment 8 of the presentinvention in further including an N-channel MOS transistor TR41 and ajunction field-effect transistor TR42.

N-channel MOS transistor TR41 has the drain connected to power supplypotential node NL1 and the source connected to the second end ofresistor R.

Junction field-effect transistor TR42 has the drain connected to thegate of N-channel MOS transistor TR41, the gate connected to the secondend of resistor R, and the source connected to the first electrode ofcapacitor C.

FIG. 15 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 10 of the presentinvention.

Referring to FIG. 15, semiconductor device 110 is different fromsemiconductor device 108 according to Embodiment 8 of the presentinvention in further including a gate electrode G41, a gate insulatingfilm GF41, n⁺ type diffusion regions 4 and 12, and contact CT2.

N⁺ type diffusion region 4 is formed in the surface of n-type diffusionregion 2 at a distance from the main surface of p⁻ type substrate 1 andp-type diffusion region 3. N⁺ type diffusion region 4 has node N2coupled to gate electrode G41. Namely, n⁺ type diffusion region 4 isconnected to gate electrode G41 through contact CT2.

It is noted that semiconductor device 110 may not include n⁺ typediffusion region 4. In this case, n-type diffusion region 2 has node N2coupled to power supply potential node NL1.

N⁺ type diffusion region 12 is formed in the surface of p-type diffusionregion 3 at a distance from the main surface of p⁻ type substrate 1,n-type diffusion region 2, and n⁺ type diffusion region 11. N⁺ typediffusion region 12 has node N3 coupled to power supply potential nodeNL1 through contact CT1 and resistor R.

N-channel MOS transistor TR41 has gate electrode G41 formed on thesurface of p-type diffusion region 3 with gate insulating film GF41being interposed, the drain formed of n⁺ type diffusion region 11, andthe source formed of n⁺ type diffusion region 12. Gate electrode G41 isprovided, opposed to a channel region in p-type diffusion region 3 lyingbetween n⁺ type diffusion regions 11 and 12, with gate insulating filmGF41 being interposed. N-channel MOS transistor TR41 supplies thecharging current to capacitor C through n-type diffusion region 2.

Junction field-effect transistor TR42 has the gate formed of n-typediffusion region 2 and p-type diffusion region 3, the drain formed ofn-type diffusion region 2 and coupled to gate electrode G41 through nodeN2, and the source formed of n-type diffusion region 2 and coupled tothe first electrode of capacitor C through node N1.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc. Then, as theforward bias voltage is applied to the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11, the reverse currentmay flow from capacitor C to power supply potential node NL1.

In the semiconductor device according to Embodiment 10 of the presentinvention, however, if potential Vb rises and exceeds power supplyvoltage Vcc, the potential of contact CT2 rises until junctionfield-effect transistor TR42 pinches off. When the potential of contactCT2, that is, the potential of gate electrode G41, exceeds the thresholdvoltage of N-channel MOS transistor TR41, N-channel MOS transistor TR41turns on, and n⁺ type diffusion region 11 and p-type diffusion region 3are short-circuited through n⁺ type diffusion region 12 and contact CT1.According to such a configuration, application of the forward biasvoltage to the pn junction formed by p-type diffusion region 3 and n⁺type diffusion region 11 can be prevented, and therefore, the reversecurrent can be prevented from flowing from capacitor C to power supplypotential node NL1.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 8, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 10 of thepresent invention, as compared with semiconductor device 108 accordingto Embodiment 8 of the present invention, the resistance value of thecurrent path from power supply potential node NL1 to capacitor C canfurther be lowered, and the charging current can efficiently be suppliedto the charging-target element.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 11>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 10 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 10 except for the disclosure below.

FIG. 16 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 11 of the presentinvention.

Referring to FIG. 16, a semiconductor device 111 is different fromsemiconductor device 110 according to Embodiment 10 of the presentinvention in further including a diode D41.

Diode D41 is a Zener diode, and has an anode connected to power supplypotential node NL1, and a cathode connected to gate electrode G41. DiodeD41 clamps an applied reverse voltage to a prescribed voltage value.

According to such a configuration, application of a transientovervoltage to gate electrode G41 of N-channel MOS transistor TR41 canbe prevented, and gate breakdown of N-channel MOS transistor TR41 can beprevented.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 10, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 11 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 10 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 12>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 10 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 10 except for the disclosure below.

FIG. 17 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 12 of the presentinvention.

Referring to FIG. 17, a semiconductor device 112 is different fromsemiconductor device 110 according to Embodiment 10 of the presentinvention in further including a diode D42.

Diode D42 is a Zener diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to gate electrode G41. Diode D42 clamps an applied reversevoltage to a prescribed voltage value.

According to such a configuration, application of a transientovervoltage to gate electrode G41 of N-channel MOS transistor TR41 canbe prevented, and gate breakdown of N-channel MOS transistor TR41 can beprevented.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 10, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 12 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 10 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 13>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 10 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 10 except for the disclosure below.

FIG. 18 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 13 of the presentinvention.

Referring to FIG. 18, a semiconductor device 113 is different fromsemiconductor device 110 according to Embodiment 10 of the presentinvention in further including a diode D43.

Diode D43 is a Schottky diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to power supply potential node NL1. A forward voltage of diodeD43 is smaller than the forward voltage of the pn junction formed byp-type diffusion region 3 and n⁺ type diffusion region 11.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc. Then, as theforward bias voltage is applied to the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11, the reverse currentmay flow from capacitor C to power supply potential node NL1.

The semiconductor device according to Embodiment 13 of the presentinvention, however, includes diode D43 of which forward voltage issmaller than the forward voltage of the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11. According to such aconfiguration, application of the forward bias voltage to the pnjunction formed by p-type diffusion region 3 and n⁺ type diffusionregion 11 can be prevented, and therefore, the reverse current can beprevented from flowing from capacitor C to power supply potential nodeNL1.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 10, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 13 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 10 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 14>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 10 in additionallyincluding a current path from power supply potential node NL1 tocapacitor C. The semiconductor device in the present embodiment is thesame as the semiconductor device according to Embodiment 10 except forthe disclosure below.

FIG. 19 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 14 of the presentinvention. FIG. 20 is a cross-sectional view showing the configurationof the semiconductor device according to Embodiment 14 of the presentinvention.

Referring to FIGS. 19 and 20, a semiconductor device 114 is differentfrom semiconductor device 110 according to Embodiment 10 of the presentinvention in further including a diode D51.

Diode D51 has an anode connected to power supply potential node NL1 anda cathode connected to contact CT2 and gate electrode G41.

As junction field-effect transistor TR42 has the drain connected topower supply potential node NL1 through diode D51, the charging currentis supplied to capacitor C through n-type diffusion region 2.

According to such a configuration, the charging current supplied tocapacitor C is implemented as the sum of the charging current fromcontact CT1 to capacitor C resulting from holes injected from p-typediffusion region 3 to n-type diffusion region 2, the charging currentfrom contact CT11 to capacitor C supplied by NPN transistor TR31, andthe charging current from contact CT2 to capacitor C supplied byjunction field-effect transistor TR42.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 10, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 14 of thepresent invention, as compared with semiconductor device 110 accordingto Embodiment 10 of the present invention, the resistance value of thecurrent path from power supply potential node NL1 to capacitor C canfurther be lowered, and the charging current can efficiently be suppliedto the charging-target element.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 15>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 8 in additionallyincluding a transistor. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 8 except for the disclosure below.

FIG. 21 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 15 of the presentinvention.

Referring to FIG. 21, a semiconductor device 115 is different fromsemiconductor device 108 according to Embodiment 8 of the presentinvention in further including an N-channel MOS transistor TR61.

N-channel MOS transistor TR61 has the drain connected to power supplypotential node NL1, the source connected to the first electrode ofcapacitor C, and the gate connected to power supply potential node NL1.

FIG. 22 is a cross-sectional view showing the configuration of thesemiconductor device according to Embodiment 15 of the presentinvention.

Referring to FIG. 22, semiconductor device 115 is different fromsemiconductor device 108 according to Embodiment 8 of the presentinvention in further including a gate electrode G61 and a gateinsulating film GF61.

N-channel MOS transistor TR61 has gate electrode G61 formed on thesurface of p-type diffusion region 3 with gate insulating film GF61being interposed, the source formed of n-type diffusion region 2, andthe drain formed of n⁺ type diffusion region 11. Gate electrode G61 isprovided, opposed to a channel region in p-type diffusion region 3 lyingbetween n-type diffusion region 2 and n⁺ type diffusion region 11, withgate insulating film GF61 being interposed. N-channel MOS transistorTR61 supplies the charging current to capacitor C through n-typediffusion region 2.

When potential Vb lowers and becomes lower than power supply voltageVcc, a positive bias voltage is applied to gate electrode G61 by anamount of voltage lowering due to the current that flows throughresistor R. When the positive bias voltage exceeds a threshold voltageof N-channel MOS transistor TR61, N-channel MOS transistor TR61 turnson, and N-channel MOS transistor TR61 supplies the charging current tocapacitor C through n-type diffusion region 2.

According to such a configuration, the charging current supplied tocapacitor C is implemented as the sum of the charging current fromcontact CT1 to capacitor C resulting from holes injected from p-typediffusion region 3 to n-type diffusion region 2, the charging currentfrom contact CT11 to capacitor C supplied by NPN transistor TR31, andthe charging current from contact CT11 to capacitor C supplied byN-channel MOS transistor TR61.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 8, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 15 of thepresent invention, as compared with semiconductor device 108 accordingto Embodiment 8 of the present invention, the resistance value of thecurrent path from power supply potential node NL1 to capacitor C canfurther be lowered, and the charging current can efficiently be suppliedto the charging-target element.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 16>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 15 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 15 except for the disclosure below.

FIG. 23 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 16 of the presentinvention.

Referring to FIG. 23, a semiconductor device 116 is different fromsemiconductor device 115 according to Embodiment 15 of the presentinvention in further including a diode D61.

Diode D61 is a Zener diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to power supply potential node NL1. Diode D61 clamps anapplied reverse voltage to a prescribed voltage value.

According to such a configuration, application of a transientovervoltage to gate electrode G61 of N-channel MOS transistor TR61 canbe prevented, and gate breakdown of N-channel MOS transistor TR61 can beprevented.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 15, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 16 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 15 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 17>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 16 in additionallyincluding a protection circuit. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 16 except for the disclosure below.

FIG. 24 is a circuit diagram showing a configuration of thesemiconductor device according to Embodiment 17 of the presentinvention.

Referring to FIG. 24, a semiconductor device 117 is different fromsemiconductor device 116 according to Embodiment 16 of the presentinvention in further including a diode D62.

Diode D62 is a Schottky diode, and has an anode connected to p-typediffusion region 3, that is, the second end of resistor R, and a cathodeconnected to power supply potential node NL1. A forward voltage of diodeD62 is smaller than the forward voltage of the pn junction formed byp-type diffusion region 3 and n⁺ type diffusion region 11.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc. Then, as theforward bias voltage is applied to the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11, the reverse currentmay flow from capacitor C to power supply potential node NL1.

The semiconductor device according to Embodiment 17 of the presentinvention, however, includes diode D62 of which forward voltage issmaller than the forward voltage of the pn junction formed by p-typediffusion region 3 and n⁺ type diffusion region 11. According to such aconfiguration, application of the forward bias voltage to the pnjunction formed by p-type diffusion region 3 and n⁺ type diffusionregion 11 can be prevented, and therefore, the reverse current can beprevented from flowing from capacitor C to power supply potential nodeNL1.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 16, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 17 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 16 of the present invention.

The semiconductor device according to Embodiment 17 of the presentinvention includes diodes D61 and D62 connected in parallel.Accordingly, gate breakdown of N-channel MOS transistor TR61 can beprevented and the reverse current can be prevented from flowing fromcapacitor C to power supply potential node NL1. This effect is alsoobtained in the semiconductor devices according to Embodiments 6, 7, 12,and 13 of the present invention.

Though the semiconductor devices according to Embodiments 1 to 17 of thepresent invention are configured to include resistor R, the presentinvention is not limited as such. If electrons that have flowed fromn-type diffusion region 2 into p-type diffusion region 3 can be causedto reach contact CT1 by setting the impurity concentration of p-typediffusion region 3 to such a low level as 1×10¹⁷/cm³, an amount of holesinjected from p-type diffusion region 3 to n-type diffusion region 2 canrelatively be decreased. Accordingly, the semiconductor device may notinclude resistor R. If resistor R can be dispensed with, for example,diode D2 in semiconductor device 102 according to Embodiment 2 of thepresent invention is no longer necessary. Namely, even if thesemiconductor device does not include diode D2, the potential of contactCT1 can be prevented from exceeding power supply voltage Vcc, andavalanche between n⁺ type diffusion region 4 and p-type diffusion region3 can be prevented.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 18>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 8 in not including n⁺type diffusion region 11. The semiconductor device in the presentembodiment is the same as the semiconductor device according toEmbodiment 8 except for the disclosure below.

FIG. 25 is a cross-sectional view showing a configuration of thesemiconductor device according to Embodiment 18 of the presentinvention.

Referring to FIG. 25, a semiconductor device 118 is different fromsemiconductor device 108 according to Embodiment 8 of the presentinvention in that n⁺ type diffusion region 11 is not provided but a p⁺type diffusion region (charge carrier drift restriction portion) 24 isprovided and that a p-type diffusion region (charge carrier driftrestriction portion) 25 is provided instead of p-type diffusion region3.

P-type diffusion region 25 has an impurity concentration not larger thana prescribed value at which charge carrier is allowed to drift fromn-type diffusion region 2 to node N4. For example, p-type diffusionregion 25 has such a low impurity concentration as 1×10¹⁷/cm³. Accordingto such a configuration, electrons that have flowed from n-typediffusion region 2 to p-type diffusion region 25 can reach contact CT11.Therefore, NPN transistor TR31 can be formed of p-type diffusion region25 and n-type diffusion region 2. More specifically, NPN transistor TR31has a base and a collector formed of p-type diffusion region 25 and anemitter formed of n-type diffusion region 2. NPN transistor TR31supplies the charging current to capacitor C through n-type diffusionregion 2.

Here, by allowing the electrons that have flowed from n-type diffusionregion 2 to p-type diffusion region 25 to reach contact CT11, an amountof holes injected from power supply potential node NL1 to n-typediffusion region 2 through contact CT11 and p-type diffusion region 25can relatively be decreased. Namely, without n⁺ type diffusion region11, semiconductor device 118 can restrict the amount of holes injectedfrom power supply node NL1 to n-type diffusion region 2 through contactCT11 and p-type diffusion region 25.

P⁺ type diffusion region 24 is formed in the surface of p-type diffusionregion 25 at a distance from the main surface of p⁻ type substrate 1 andn-type diffusion region 2. P-type diffusion region 25 is connected tocontact CT1 through p⁺ type diffusion region 24. By thus providing p⁺type diffusion region 24 having an impurity concentration higher thanp-type diffusion region 25 between p-type diffusion region 25 andcontact CT1, the electrons that have flowed from n-type diffusion region2 into p-type diffusion region 25 can be prevented from reaching contactCT1.

Alternatively, by providing p⁺ type diffusion region 24 having animpurity concentration higher than p-type diffusion region 25 betweenp-type diffusion region 25 and contact CT1, the amount of holes injectedfrom power supply potential node NL1 into n-type diffusion region 2through contact CT1 and p-type diffusion region 25 can be restricted.Therefore, semiconductor device 118 may not include resistor R.

Even if semiconductor device 118 does not include p⁺ type diffusionregion 24, by providing contact CT11, i.e., node N4, farther fromcontact CT3, i.e., node N1, relative to contact CT1, i.e., node N3, inthe cross-section shown in FIG. 25 and by setting a distance betweencontacts CT1 and CT11 to at least a prescribed value, the electrons thathave flowed from n-type diffusion region 2 into p-type diffusion region25 can be prevented from reaching contact CT1 by means of the internalresistance of p-type diffusion region 25.

Here, the drain of high-voltage side power semiconductor element TR101is connected, for example, to a voltage of several hundred volts. Inthis case, potential Vs suddenly increases, for example, to severalhundred volts in 1 microsecond in response to the switching operation ofhigh-voltage side power semiconductor element TR101 and low-voltage sidepower semiconductor element TR102.

Accordingly, a displacement current flows through resistor R due tosudden increase in potential Vb and the potential of contact CT1 becomessignificantly greater than power supply voltage Vcc.

The semiconductor device according to Embodiment 18 of the presentinvention, however, does not include n⁺ type diffusion region 11.According to such a configuration, it is not necessary to provide aSchottky diode, for example, as in the semiconductor device according toEmbodiment 9 of the present invention. Namely, as the pn junction is notformed between p-type diffusion region 25 and contact CT11 in thesemiconductor device according to Embodiment 18 of the presentinvention, flow of the reverse current from capacitor C to power supplypotential node NL1 can be prevented even if the potential of contact CT1is significantly higher than power supply voltage Vcc.

If semiconductor device 118 does not include n⁺ type diffusion region11, p-type diffusion region 25 has node N4 coupled to power supplypotential node NL1.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 8, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 18 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 8 of the present invention.

Though the semiconductor devices according to Embodiments 1 to 18 of thepresent invention are configured to include resistor R, the presentinvention is not limited as such. If the amount of holes injected fromp-type diffusion region 3 into n-type diffusion region 2 can berestricted by means of electric resistance of p-type diffusion region 3,the semiconductor device may not include resistor R. For example, in thecross-sectional view in FIG. 2, by setting a longer length of p-typediffusion region 3 in the vertical direction in the sheet or a smallerwidth of p-type diffusion region 3 in the direction perpendicular to thesheet surface, the electric resistance of a current path from p-typediffusion region 3 to p⁻ type substrate 1 can be increased. Morespecifically, for example, by setting a length of p-type diffusionregion 3 in the direction of stack of n-type diffusion region 2 andp-type diffusion region 3 to a value not smaller than a prescribed valueor by setting a width of p-type diffusion region 3 in the direction ofstack of n-type diffusion region 2 and p-type diffusion region 3 to avalue not larger than a prescribed value in the cross-sectional viewshown in FIG. 2, the electric resistance of a current path from p-typediffusion region 3 to p⁻ type substrate 1 can be increased.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 19>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 10 in not includingresistor R.

FIG. 26 is a cross-sectional view showing a configuration of thesemiconductor device according to Embodiment 19 of the presentinvention.

Referring to FIG. 26, a semiconductor device 119 is different fromsemiconductor device 110 according to Embodiment 10 of the presentinvention in that resistor R is not included, a p-type diffusion region26 is included instead of p-type diffusion region 3, and a contact CT12is further included.

P-type diffusion region 26 has electric resistance capable ofrestricting an amount of holes injected from p-type diffusion region 26to n-type diffusion region 2. For example, as described previously, bysetting a length of p-type diffusion region 26 in the direction of stackof n-type diffusion region 2 and p-type diffusion region 26 to a valuenot smaller than a prescribed value or by setting a width of p-typediffusion region 26 in the direction of stack of n-type diffusion region2 and p-type diffusion region 26 to a value not larger than a prescribedvalue in the cross-sectional view shown in FIG. 26, the electricresistance of a current path from p-type diffusion region 26 to p⁻ typesubstrate 1 can be increased. According to such a configuration, powerloss of the power supply supplying power supply voltage Vcc can bereduced.

In addition, by providing n⁺ type diffusion region 11 and n⁺ typediffusion region 12 at a distance from each other by at least aprescribed length, the internal resistance of p-type diffusion region 26serves in place of resistor R between the drain and the source ofN-channel MOS transistor TR41 in semiconductor device 110.

Contact CT12 is connected to p-type diffusion region 26, and provided ata position in proximity to n⁺ type diffusion region 11. Contact CT12 isprovided, opposed to contact CT1 connected to n⁺ type diffusion region12, with contact CT11 connected to n⁺ type diffusion region 11 lyingtherebetween. According to such a configuration, the internal resistanceof p-type diffusion region 26 can be short-circuited when N-channel MOStransistor TR41 is turned on.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 10, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 19 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 10 of the present invention.

Another embodiment of the present invention will now be described withreference to the drawings. It is noted that the same or correspondingelements in the drawings have the same reference characters allotted,and description thereof will not be repeated.

<Embodiment 20>

The present embodiment relates to a semiconductor device different fromthe semiconductor device according to Embodiment 1 in not includingresistor R.

FIG. 27 is a cross-sectional view showing a configuration of thesemiconductor device according to Embodiment 20 of the presentinvention.

Referring to FIG. 27, a semiconductor device 120 is different fromsemiconductor device 101 according to Embodiment 1 of the presentinvention in that resistor R is not included but a p⁺ type diffusionregion (charge carrier drift restriction portion) 27 is furtherincluded.

P⁺ type diffusion region 27 is formed in the surface of p-type diffusionregion 3 at a distance from the main surface of p⁻ type substrate 1 andn-type diffusion region 2. P-type diffusion region 3 is connected tocontact CT1 through p⁺ type diffusion region 27. By thus arranging p⁺type diffusion region 27 having an impurity concentration higher thanp-type diffusion region 25 between p-type diffusion region 3 and contactCT1, an amount of holes injected from power supply potential node NL1into n-type diffusion region 2 through contact CT1 and p-type diffusionregion 3 can be restricted.

As the configuration and the operation are otherwise the same as thoseof the semiconductor device according to Embodiment 1, detaileddescription will not be repeated here.

Therefore, in the semiconductor device according to Embodiment 20 of thepresent invention, the charging current can efficiently be supplied tothe charging-target element, as in the semiconductor device according toEmbodiment 1 of the present invention.

Though semiconductor device 120 according to Embodiment 20 of thepresent invention includes p⁺ type diffusion region 27, the presentinvention is not limited as such. Even if semiconductor device 120 doesnot include p⁺ type diffusion region 27, by providing a p-type diffusionregion lower in impurity concentration, for example, of 1×10¹⁷/cm³instead of p-type diffusion region 3, the electrons that have flowedfrom n-type diffusion region 2 to the p-type diffusion region areallowed to reach contact CT1. Therefore, an amount of holes injectedfrom power supply potential node NL1 into n-type diffusion region 2through contact CT1 and the p-type diffusion region can relatively bedecreased.

Meanwhile, though the semiconductor devices according to Embodiments 1to 20 of the present invention have such cross-sectional structures asshown in respective corresponding cross-sectional views, the presentinvention is not limited as such. Conductivity types of semiconductorlayers and semiconductor regions, namely, p-type and n-type, may bereversed. In such a case, for example, in the semiconductor deviceaccording to Embodiment 1 of the present invention, power supply voltageVcc is a negative voltage, the cathode of diode D1 is connected to powersupply potential node NL1, and the anode is connected to contact CT2.

In addition, though the semiconductor devices according to Embodiments 1to 20 of the present invention have such cross-sectional structures asshown in respective corresponding cross-sectional views, the presentinvention is not limited as such. Each diffusion region may be stackedin the horizontal direction or the semiconductor device may beconfigured with discrete parts.

Although the present invention has been described and illustrated indetail, it is clearly understood that the same is by way of illustrationand example only and is not to be taken by way of limitation, the spiritand scope of the present invention being limited only by the terms ofthe appended claims.

What is claimed is:
 1. A semiconductor device supplying a chargingcurrent to a charging-target element, comprising: a semiconductor layerof a first conductivity type; a first semiconductor region of a secondconductivity type formed on a main surface of said semiconductor layerand having a first node coupled to a first electrode of saidcharging-target element and a second node coupled to a power supplypotential node supplied with a power supply voltage; a secondsemiconductor region of the first conductivity type formed in a surfaceof said first semiconductor region at a distance from said semiconductorlayer and having a third node coupled to said power supply potentialnode; and a charge carrier drift restriction portion restricting driftof charge carrier from said third node to said semiconductor layer; saidcharge carrier drift restriction portion includes a resistor connectedbetween said power supply potential node and said third node of saidsecond semiconductor region.
 2. The semiconductor device according toclaim 1, wherein said charge carrier drift restriction portion furtherincludes a semiconductor region of the first conductivity type formed ina surface of said second semiconductor region at a distance from saidfirst semiconductor region, having said third node, and having animpurity concentration higher than said second semiconductor region. 3.The semiconductor device according to claim 1, wherein said chargecarrier drift restriction portion further includes said secondsemiconductor region, and said second semiconductor region has animpurity concentration equal to or lower than a prescribed value, atwhich charge carrier is allowed to drift from said first semiconductorregion to said third node.
 4. The semiconductor device according toclaim 1, wherein said charge carrier drift restriction portion furtherincludes said second semiconductor region, and said second semiconductorregion has a length in a direction of stack of said first semiconductorregion and said second semiconductor region equal to or greater than aprescribed value or has a width in the direction of stack of said firstsemiconductor region and said second semiconductor region equal to orsmaller than a prescribed value.
 5. The semiconductor device accordingto claim 1, further comprising: a first transistor having a firstconducting electrode formed of said semiconductor layer, a controlelectrode formed of said first semiconductor region, and a secondconducting electrode formed of said second semiconductor region; and asecond transistor having a control electrode formed of said firstsemiconductor region and said second semiconductor region, and a firstconducting electrode and a second conducting electrode formed of saidfirst semiconductor region.
 6. The semiconductor device according toclaim 1, further comprising a diode having an electrode of the secondconductivity type coupled to said first semiconductor region and anelectrode of the first conductivity type coupled to said power supplypotential node.
 7. The semiconductor device according to claim 1,further comprising a diode having an electrode of the first conductivitytype coupled to said second semiconductor region and an electrode of thesecond conductivity type coupled to said power supply potential node. 8.The semiconductor device according to claim 5, further comprising athird transistor having a first conducting electrode formed of saidfirst semiconductor region and a control electrode and a secondconducting electrode formed of said second semiconductor region.
 9. Thesemiconductor device according to claim 5, further comprising: a thirdsemiconductor region of the second conductivity type having said thirdnode and formed in the surface of said second semiconductor region at adistance from said first semiconductor region; and a third transistorhaving a first conducting electrode formed of said first semiconductorregion, a control electrode formed of said second semiconductor region,and a second conducting electrode formed of said third semiconductorregion.
 10. The semiconductor device according to claim 9, furthercomprising a diode having an electrode of the first conductivity typecoupled to said second semiconductor region and an electrode of thesecond conductivity type coupled to said power supply potential node,and of which forward voltage is smaller than a forward voltage betweensaid second semiconductor region and said third semiconductor region.11. The semiconductor device according to claim 9, further comprising afourth transistor having a control electrode formed on the surface ofsaid second semiconductor region with an insulating film beinginterposed, and coupled to said power supply potential node, a firstconducting electrode formed of said first semiconductor region, and asecond conducting electrode formed of said third semiconductor region.12. The semiconductor device according to claim 11, further comprising adiode having an electrode of the first conductivity type coupled to saidsecond semiconductor region and an electrode of the second conductivitytype coupled to said power supply potential node, and clamping anapplied reverse voltage to a prescribed voltage value.
 13. Thesemiconductor device according to claim 11, further comprising a diodehaving an electrode of the first conductivity type coupled to saidsecond semiconductor region and an electrode of the second conductivitytype coupled to said power supply potential node, and of which forwardvoltage is smaller than a forward voltage between said secondsemiconductor region and said third semiconductor region.
 14. Thesemiconductor device according to claim 1, wherein said charging-targetelement has the first electrode connected to a power supply voltageterminal of a drive circuit supplying a voltage to a control electrodeof a high-voltage side power semiconductor element out of thehigh-voltage side power semiconductor element and a low-voltage sidepower semiconductor element connected in series, said charging-targetelement has a second electrode connected to a reference voltage terminalof said drive circuit, and said drive circuit has the reference voltageterminal connected to a connection point of said high-voltage side powersemiconductor element and said low-voltage side power semiconductorelement.
 15. A semiconductor device supplying a charging current to acharging-target element, comprising: a resistor having a first endcoupled to a power supply potential node supplied with a power supplyvoltage; a first transistor having a first conducting electrode coupledto a second end of said resistor, a second conducting electrode coupledto a ground potential node supplied with a ground voltage, and a controlelectrode coupled to a first electrode of said charging-target element;and a second transistor having a first conducting electrode coupled tosaid power supply potential node, a second conducting electrode coupledto the first electrode of said charging-target element, and a controlelectrode coupled to the second end of said resistor.
 16. Thesemiconductor device according to claim 15, further comprising a thirdtransistor having a first conducting electrode coupled to said powersupply potential node, a second conducting electrode coupled to saidfirst electrode of said charging-target element, and a control electrodecoupled to said second end of said resistor.
 17. The semiconductordevice according to claim 15, further comprising: a fourth transistorhaving a first conducting electrode coupled to said power supplypotential node and a second conducting electrode coupled to said secondend of said resistor; and a fifth transistor having a first conductingelectrode coupled to a control electrode of said fourth transistor, asecond conducting electrode coupled to said first electrode of saidcharging-target element, and a control electrode coupled to said secondend of said resistor.
 18. The semiconductor device according to claim17, wherein said fourth transistor has the control electrode furthercoupled to said power supply potential node.
 19. The semiconductordevice according to claim 15, further comprising a sixth transistorhaving a first conducting electrode and a control electrode coupled tosaid power supply potential node, and a second conducting electrodecoupled to said first electrode of said charging-target element.
 20. Thesemiconductor device according to claim 15, wherein said charging-targetelement has the first electrode connected to a power supply voltageterminal of a drive circuit supplying a voltage to a control electrodeof a high-voltage side power semiconductor element out of thehigh-voltage side power semiconductor element and a low-voltage sidepower semiconductor element connected in series, said charging-targetelement has a second electrode connected to a reference voltage terminalof said drive circuit, and said drive circuit has the reference voltageterminal connected to a connection point of said high-voltage side powersemiconductor element and said low-voltage side power semiconductorelement.